?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com fqd3n60c / fqu3n60c rev. a1 fqd3n60c / fqu3n60c 600v n-channel mosfet august 2006 qfet ? fqd3n60c / fqu3n60c 600v n-channel mosfet features ? 2.4a, 600v, r ds(on) = 3.4 ? @v gs = 10 v ? low gate charge ( typical 10.5nc) ? low crss ( typical 5pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effect transis- tors are produced using fairchil d?s proprietary, planar stripe, dmos technology. this advanced technology has be en especially tailored to mini- mize on-state resistance, prov ide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effi- ciency switched mode power supplies, electronic lamp ballasts based on half bridge topology. absolute maximum ratings thermal characteristics d g s i-pak fqu series gs d d-pak fqd series gs d symbol parameter fqd3n60c / fqu3n60c units v dss drain-source voltage 600 v i d drain current - continuous (t c = 25c) 2.4 a - continuous (t c = 100c) 1.5 a i dm drain current - pulsed (note 1) 9.6 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 150 mj i ar avalanche current (note 1) 2.4 a e ar repetitive avalanche energy (note 1) 5.0 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 50 w - derate above 25c 0.4 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 c symbol parameter fqd3n60c / fqu3n60c units r jc thermal resistance, junction-to-case 2.5 c / w r ja* thermal resistance, junction-to-ambient* 50 c / w r ja thermal resistance, junction-to-ambient 110 c / w * when mounted on the minimum pad size recommended (pcb mount)
2 www.fairchildsemi.com fqd3n60c / fqu3n60c rev. a1 fqd3n60c / fqu3n60c 600v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 47mh, i as = 2.4a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 3a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature device marking device package reel size tape width quantity fqd3n60c FQD3N60CTM d-pak 380mm 16mm 2500 fqd3n60c fqd3n60ctf d-pak 380mm 16mm 2000 fqu3n60c fqu3n60ctu i-pak - - 75 symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 600 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.6 -- v/c i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 1 a v ds = 480 v, t c = 125c -- -- 10 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2.0--4.0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 1.2 a -- 2.8 3.4 ? g fs forward transconductance v ds = 40 v, i d = 1.2 a (note 4) -- 3.5 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 435 565 pf c oss output capacitance -- 45 60 pf c rss reverse transfer capacitance -- 5 8 pf switching characteristics t d(on) turn-on delay time v dd = 300 v, i d = 3a, r g = 25 ? (note 4, 5) -- 12 34 ns t r turn-on rise time -- 30 70 ns t d(off) turn-off delay time -- 35 80 ns t f turn-off fall time -- 35 80 ns q g total gate charge v ds = 480 v, i d = 3a, v gs = 10 v (note 4, 5) -- 10.5 14 nc q gs gate-source charge -- 2.1 -- nc q gd gate-drain charge -- 4.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 3 a i sm maximum pulsed drain-source diode forward current -- -- 12 a v sd drain-source diode forward voltage v gs = 0 v, i s = 2.4 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 3 a, di f / dt = 100 a/ s (note 4) -- 260 -- ns q rr reverse recovery charge -- 1.6 -- c
3 www.fairchildsemi.com fqd3n60c / fqu3n60c rev. a1 fqd3n60c / fqu3n60c 600v n-channel mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs . source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v notes : ? 1. 250 s pulse test 2. t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 246810 10 0 10 1 150 o c 25 o c -55 o c notes : ? 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 01234567 0 2 4 6 8 10 12 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.20.40.60.81.01.21.41.6 10 -1 10 0 10 1 150 ? notes : ? 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 100 200 300 400 500 600 700 800 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd note ; ? 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 024681012 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v note : i ? d = 10a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fqd3n60c / fqu3n60c rev. a1 fqd3n60c / fqu3n60c 600v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ? notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? notes : 1. v gs = 10 v 2. i d = 1.2 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 i d , drain current [a] t c , case temperature [ ] ? 10 0 10 -2 10 -1 10 0 10 1 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : ? 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : ? 1. z jc (t) = 2.5 /w m ax. ? 2. d uty f actor, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
5 www.fairchildsemi.com fqd3n60c / fqu3n60c rev. a1 fqd3n60c / fqu3n60c 600v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com fqd3n60c / fqu3n60c rev. a1 fqd3n60c / fqu3n60c 600v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
7 www.fairchildsemi.com fqd3n60c / fqu3n60c rev. a1 fqd3n60c / fqu3n60c 600v n-channel mosfet mechanical dimensions d-pak dimensions in millimeters
8 www.fairchildsemi.com fqd3n60c / fqu3n60c rev. a1 fqd3n60c / fqu3n60c 600v n-channel mosfet package dimensions (continued) i-pak dimensions in millimeters
9 www.fairchildsemi.com fqd3n60c / fqu3n60c rev. a1 fqd3n60c / fqu3n60c 600v n-channel mosfet trademarks the following are registered and unregistered tr ademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without furthe r notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it co nvey any license under its paten t rights, nor the rights of others. these specifications do not expand the terms of fa irchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? across the board. around the world.? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specif ications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor rese rves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i20
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